Current status of gallium oxide material and device technologies
| Presenter: |
Masataka Higashiwaki |
Department of Physics and Electronics, Osaka Metropolitan University National Institute of Information and Communications Technology |
| Start: |
11:00 (55 minutes) |
Abstract
Gallium oxide (Ga2O3) has excellent material properties especially for power device applications that are represented by the extremely large bandgap of 4.5 eV and the high breakdown field over 7 MV/cm. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from single-crystal bulks synthesized by melt-growth methods. These two features have drawn much attention to Ga2O3 as a new ultrawide bandgap semiconductor following SiC and GaN. In this talk, after a brief introduction of the material properties, state-of-the-art Ga2O3 material and device technologies will be discussed, including (1) bulk melt growth, (2) thin-film epitaxial growth, (3) FETs, and (4) Schottky barrier diodes.
