History of 2D/3D Multi-Level Flash Memory Design Technology
| Presenter: |
Noboru Shibata |
KIOXIA Holdings Corporation |
| Start: |
15:25 (55 minutes) |
Abstract
Currently, Multi-Level-Cell Flash Memory is used in a wide range of applications as a high-capacity, low-cost memory and has become indispensable in modern life. The first prototype of the Multi-Level-Cell NAND Flash Memory only stored 128Mbit with 2 bits per cell. Since commercialization in 2001, the Multi-Level-Cell NAND Flash memory has increased by over 10,000 times to 1.33Tbit memory density with 4 bits per cell (QLC). This tutorial will go over the challenges faced in shrinking down the size of memory cells and stacking multi-layers in 3D, how these obstacles were overcome to ensure reliability, and achieve higher capacity and faster memory. The transition and development of multi-level cell circuit design technology, cell characteristics and reliability will also be introduced.
